Diffusion controlled initial recombination

Parameters for point-defect diffusion and recombination

Point-defect kinetics are important for understanding and modeling dopant diffusion in silicon. This paper describes models for point-defect transport and recombination used in SUPREM-IV, and does extensive fitting for the model parameters. The experimental data used are from experiments on oxidation-enhanced diffusion (OED). Interstitial traps are shown to be critical for consistent agreement ...

Controlled diffusion processes ∗ , †

This article gives an overview of the developments in controlled diffusion processes, emphasizing key results regarding existence of optimal controls and their characterization via dynamic programming for a variety of cost criteria and structural assumptions. Stochastic maximum principle and control under partial observations (equivalently, control of nonlinear filters) are also discussed. Seve...

Controlled Jump Diffusion

This paper concerns the optimal stopping time problem in a nite horizon of a controlled jump diiusion process. We prove that the value function is continuous and is a viscosity solution of the inte-grodiierential variational inequality arising from the associated dynamic programming. We also establish comparison principles, which yield uniqueness results. Moreover, the viscosity solution approa...

Diffusion-Controlled Reaction Kinetics

Diffusion-Controlled Hysteresis

A new model of time-dependent sorption-desorption hysteresis is presented. This type of hysteresis is not related to transitions between metastable adsorption states, which are a common cause of capillary condensation hysteresis in mesoporous materials. We show that time-dependent hysteresis is a consequence of slow kinetics and failure to reach equilibrium at given experimental conditions. The...